Продукція > ON SEMICONDUCTOR > EMH2418R-TL-H
EMH2418R-TL-H

EMH2418R-TL-H ON Semiconductor

ENA2267_D-2311073.pdf
Виробник: ON Semiconductor
MOSFET NCH+NCH 8.5A 24V 2.5V DRIVE
на замовлення 11760 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис EMH2418R-TL-H ON Semiconductor

Description: MOSFET 2N-CH 24V 9A SOT383FL, Supplier Device Package: SOT-383FL, EMH8, Vgs(th) (Max) @ Id: 1.3V @ 1mA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A, Drain to Source Voltage (Vdss): 24V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).

Інші пропозиції EMH2418R-TL-H

Фото Назва Виробник Інформація Доступність Ціна
EMH2418R-TL-H EMH2418R-TL-H onsemi ena2267-d.pdf Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
EMH2418R-TL-H EMH2418R-TL-H onsemi ena2267-d.pdf Description: MOSFET 2N-CH 24V 9A SOT383FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
товару немає в наявності
В кошику  од. на суму  грн.
EMH2418R-TL-H ena2267-d.pdf
EMH2418R-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
EMH2418R-TL-H ena2267-d.pdf
EMH2418R-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 24V 9A SOT383FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
товару немає в наявності
В кошику  од. на суму  грн.