EMH2801-TL-H onsemi
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 8EMH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Description: MOSFET P-CH 20V 3A 8EMH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
на замовлення 503980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1665+ | 13.45 грн |
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Технічний опис EMH2801-TL-H onsemi
Description: ONSEMI - EMH2801-TL-H - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.065 ohm, EMH, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: -, euEccn: NLR, Verlustleistung: 1W, Bauform - Transistor: EMH, Anzahl der Pins: 8Pin(s), Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.065ohm.
Інші пропозиції EMH2801-TL-H за ціною від 14.57 грн до 14.57 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
EMH2801-TL-H | Виробник : ONSEMI |
Description: ONSEMI - EMH2801-TL-H - Leistungs-MOSFET, p-Kanal, 20 V, 3 A, 0.065 ohm, EMH, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: - euEccn: NLR Verlustleistung: 1W Bauform - Transistor: EMH Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm |
на замовлення 533980 шт: термін постачання 21-31 дні (днів) |
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| EMH2801-TL-H | Виробник : ON Semiconductor |
 Trans MOSFET P-CH Si 20V 3A 8-Pin SOT-383FL T/R |
товару немає в наявності |
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EMH2801-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 20V 3A 8EMH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1W (Ta) Supplier Device Package: 8-EMH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V |
товару немає в наявності |