EMH2FHAT2R ROHM Semiconductor
Виробник: ROHM SemiconductorBipolar Transistors - Pre-Biased NPN+NPN Digital transistor (Corresponds to AEC-Q101)
на замовлення 7935 шт:
термін постачання 196-205 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 24.45 грн |
| 17+ | 21.61 грн |
| 100+ | 15.99 грн |
| 1000+ | 11.88 грн |
| 2500+ | 6.60 грн |
| 8000+ | 5.74 грн |
| 48000+ | 5.67 грн |
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Технічний опис EMH2FHAT2R ROHM Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції EMH2FHAT2R
| Фото | Назва | Виробник | Інформація |
Доступність |
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EMH2FHAT2R | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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EMH2FHAT2R | Виробник : Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |