EMH4FHAT2R Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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Технічний опис EMH4FHAT2R Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: EMT6, Resistor - Base (R1): 10kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA.
Інші пропозиції EMH4FHAT2R
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
EMH4FHAT2R | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT6 Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: EMT6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
 |
EMH4FHAT2R | ROHM Semiconductor |
Bipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101) |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. |
| EMH4FHAT2R |
|
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Description: TRANS PREBIAS 2NPN 50V EMT6
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| EMH4FHAT2R |
|
Виробник: ROHM Semiconductor
Bipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101)
Bipolar Transistors - BJT NPN+NPN Digital transistor (Corresponds to AEC-Q101)
товару немає в наявності
Мінімальне замовлення: 40 шт
В кошику
од. на суму грн.