EML22T2R Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Технічний опис EML22T2R Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX, Power - Max: 120 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: EMT6, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN + Zener, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції EML22T2R за ціною від 5.38 грн до 35.92 грн
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EML22T2R | Rohm Semiconductor |
Description: DEVELOPED SMALL PACKAGE COMPLEX Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: EMT6 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN + Zener Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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EML22T2R | ROHM Semiconductor |
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6 |
на замовлення 15999 шт: термін постачання 21-30 дні (днів) |
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| EML22T2R |
|
Виробник: Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.18 грн |
| 15+ | 20.19 грн |
| 100+ | 12.13 грн |
| 500+ | 10.54 грн |
| 1000+ | 7.17 грн |
| 2000+ | 6.60 грн |
| EML22T2R |
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Виробник: ROHM Semiconductor
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
на замовлення 15999 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.92 грн |
| 14+ | 23.42 грн |
| 100+ | 10.01 грн |
| 1000+ | 7.66 грн |
| 2500+ | 7.59 грн |
| 8000+ | 5.52 грн |
| 24000+ | 5.38 грн |