EMX51T2R ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 24.00 грн |
| 22+ | 14.77 грн |
| 100+ | 8.01 грн |
| 1000+ | 5.32 грн |
| 2500+ | 4.42 грн |
| 8000+ | 3.38 грн |
| 24000+ | 3.24 грн |
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Технічний опис EMX51T2R ROHM Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2, Supplier Device Package: EMT6, Frequency - Transition: 400MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 200mA, Power - Max: 150mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції EMX51T2R за ціною від 4.43 грн до 27.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EMX51T2R | Rohm Semiconductor |
 Description: NPN+NPN DRIVER TRANSISTOR. TWO 2Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Supplier Device Package: EMT6 Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 200mA Power - Max: 150mW Operating Temperature: 150°C (TJ) |
на замовлення 7985 шт: термін постачання 21-31 дні (днів) |
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| EMX51T2R |
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Виробник: Rohm Semiconductor
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Description: NPN+NPN DRIVER TRANSISTOR. TWO 2
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 200mA
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
на замовлення 7985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.18 грн |
| 17+ | 18.40 грн |
| 100+ | 9.27 грн |
| 500+ | 7.10 грн |
| 1000+ | 5.27 грн |
| 2000+ | 4.43 грн |