EPC2034
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Технічний опис EPC2034 EPC
Description: GANFET N-CH 200V 48A DIE, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Інші пропозиції EPC2034
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
EPC2034 | EPC |
Description: GANFET N-CH 200V 48A DIE Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 7mA Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die |
товару немає в наявності |
В кошику од. на суму грн. |
| EPC2034 | EPC |
|
товару немає в наявності |
В кошику од. на суму грн. |
| EPC2034 |
|
Виробник: EPC
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Description: GANFET N-CH 200V 48A DIE
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
товару немає в наявності
В кошику
од. на суму грн.