EPC2035
Виробник: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 40.27 грн |
| 5000+ | 36.15 грн |
| 7500+ | 34.81 грн |
| 12500+ | 31.45 грн |
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Технічний опис EPC2035 EPC
Description: GANFET N-CH 60V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 800µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V.
Інші пропозиції EPC2035 за ціною від 40.38 грн до 142.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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EPC2035 | EPC |
Description: GANFET N-CH 60V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 800µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V |
на замовлення 17872 шт: термін постачання 21-31 дні (днів) |
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EPC2035 | EPC |
GaN FETs EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9 |
на замовлення 7164 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| EPC2035 |
|
Виробник: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
на замовлення 17872 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 142.90 грн |
| 10+ | 87.73 грн |
| 100+ | 59.17 грн |
| 500+ | 44.07 грн |
| 1000+ | 40.38 грн |