
EPC2036 Efficient Power Conversion
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
2500+ | 62.58 грн |
5000+ | 59.88 грн |
Відгуки про товар
Написати відгук
Технічний опис EPC2036 Efficient Power Conversion
Description: GANFET N-CH 100V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції EPC2036 за ціною від 42.43 грн до 137.68 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
EPC2036 | Виробник : EPC |
![]() Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 931 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
![]() |
EPC2036 | Виробник : EPC |
![]() Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
товару немає в наявності |