EPC2038
Виробник: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
| Кількість | Ціна |
|---|---|
| 2500+ | 39.97 грн |
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Технічний опис EPC2038 EPC
Description: GANFET N-CH 100V 500MA DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 20µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції EPC2038 за ціною від 35.37 грн до 148.50 грн
| Фото | Назва | Виробник | Інформація |
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EPC2038 | EPC |
Description: GANFET N-CH 100V 500MA DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 20µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 119329 шт: термін постачання 21-31 дні (днів) |
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EPC2038 | EPC |
GaN FETs EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9 |
на замовлення 11386 шт: термін постачання 21-30 дні (днів) |
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| EPC2038 |
|
Виробник: EPC
Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V 500MA DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 119329 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.83 грн |
| 10+ | 86.85 грн |
| 100+ | 58.59 грн |
| 500+ | 43.63 грн |
| 1000+ | 39.98 грн |
| EPC2038 |
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Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9
на замовлення 11386 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.50 грн |
| 10+ | 93.81 грн |
| 100+ | 54.71 грн |
| 500+ | 43.39 грн |
| 1000+ | 39.80 грн |
| 2500+ | 35.94 грн |
| 5000+ | 35.37 грн |