EPC2038
Виробник: EPCDescription: GANFET N-CH 100V 500MA DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 20µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 141293 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 35.86 грн |
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Технічний опис EPC2038 EPC
Description: GANFET N-CH 100V 500MA DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V, Vgs(th) (Max) @ Id: 2.5V @ 20µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції EPC2038 за ціною від 38.88 грн до 137.68 грн
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EPC2038 | Виробник : EPC |
Description: GANFET N-CH 100V 500MA DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2.5V @ 20µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.044 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8.4 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 141970 шт: термін постачання 21-31 дні (днів) |
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| EPC2038 | Виробник : Efficient Power Conversion |
Trans MOSFET N-CH GaN 100V 0.5A 4-Pin Die T/R |
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