EPC2052
Виробник: EPC
Description: GANFET N-CH 100V 8.2A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
| Кількість | Ціна |
|---|---|
| 2500+ | 48.10 грн |
| 5000+ | 43.31 грн |
| 7500+ | 41.78 грн |
| 12500+ | 38.74 грн |
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Технічний опис EPC2052 EPC
Description: GANFET N-CH 100V 8.2A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Інші пропозиції EPC2052 за ціною від 40.16 грн до 173.94 грн
| Фото | Назва | Виробник | Інформація |
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EPC2052 | EPC |
Description: GANFET N-CH 100V 8.2A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
на замовлення 98434 шт: термін постачання 21-31 дні (днів) |
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EPC2052 | EPC |
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5 |
на замовлення 12104 шт: термін постачання 21-30 дні (днів) |
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| EPC2052 |
|
Виробник: EPC
Description: GANFET N-CH 100V 8.2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V 8.2A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
на замовлення 98434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 165.35 грн |
| 10+ | 102.39 грн |
| 100+ | 69.66 грн |
| 500+ | 52.25 грн |
| 1000+ | 48.03 грн |
| EPC2052 |
|
Виробник: EPC
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
GaN FETs EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
на замовлення 12104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.94 грн |
| 10+ | 110.80 грн |
| 100+ | 65.33 грн |
| 500+ | 52.04 грн |
| 1000+ | 47.82 грн |
| 2500+ | 43.25 грн |
| 5000+ | 40.16 грн |