EPC2066
Виробник: EPC
Description: TRANSISTOR GAN 40V .001OHM
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
| Кількість | Ціна |
|---|---|
| 1000+ | 211.96 грн |
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Технічний опис EPC2066 EPC
Description: TRANSISTOR GAN 40V .001OHM, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 28mA, Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): +6V, -4V, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5.
Інші пропозиції EPC2066 за ціною від 249.83 грн до 506.34 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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EPC2066 | EPC |
Description: TRANSISTOR GAN 40V .001OHM Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 28mA Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 |
на замовлення 7559 шт: термін постачання 21-31 дні (днів) |
|
| EPC2066 |
|
Виробник: EPC
Description: TRANSISTOR GAN 40V .001OHM
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Description: TRANSISTOR GAN 40V .001OHM
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 28mA
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
на замовлення 7559 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 506.34 грн |
| 10+ | 330.11 грн |
| 100+ | 249.83 грн |