EPC2103
Виробник: EPC
Description: GANFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Description: GANFET 2N-CH 80V 28A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
500+ | 412.8 грн |
1000+ | 357.76 грн |
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Технічний опис EPC2103 EPC
Description: GANFET 2N-CH 80V 28A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 28A, Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Part Status: Active.
Інші пропозиції EPC2103 за ціною від 450.51 грн до 655.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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EPC2103 | Виробник : EPC |
Description: GANFET 2N-CH 80V 28A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 40V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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