EPC2107
Виробник: EPC
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 59.13 грн |
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Технічний опис EPC2107 EPC
Description: MOSFET 3N-CH 100V 9BGA, Part Status: Active, Supplier Device Package: 9-BGA (1.35x1.35), Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V, Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V, Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA, Drain to Source Voltage (Vdss): 100V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Mounting Type: Surface Mount, Package / Case: 9-VFBGA, Packaging: Tape & Reel (TR).
Інші пропозиції EPC2107 за ціною від 65.40 грн до 197.79 грн
| Фото | Назва | Виробник | Інформація |
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EPC2107 | EPC |
Description: MOSFET 3N-CH 100V 9BGA Part Status: Active Supplier Device Package: 9-BGA (1.35x1.35) Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Drain to Source Voltage (Vdss): 100V Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Mounting Type: Surface Mount Package / Case: 9-VFBGA Packaging: Cut Tape (CT) |
на замовлення 5068 шт: термін постачання 21-31 дні (днів) |
|
| EPC2107 |
|
Виробник: EPC
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Description: MOSFET 3N-CH 100V 9BGA
Part Status: Active
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.16nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
на замовлення 5068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 197.79 грн |
| 10+ | 123.12 грн |
| 100+ | 84.79 грн |
| 500+ | 65.40 грн |