EPC2108
Виробник: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
| Кількість | Ціна |
|---|---|
| 2+ | 174.85 грн |
| 10+ | 108.57 грн |
| 100+ | 74.33 грн |
| 500+ | 56.02 грн |
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Технічний опис EPC2108 EPC
Description: MOSFET 3N-CH 60V/100V 9BGA, Part Status: Obsolete, Supplier Device Package: 9-BGA (1.35x1.35), Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA, Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V, Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA, Drain to Source Voltage (Vdss): 60V, 100V, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Package / Case: 9-VFBGA.
Інші пропозиції EPC2108
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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EPC2108 | EPC |
Description: MOSFET 3N-CH 60V/100V 9BGA Part Status: Obsolete Supplier Device Package: 9-BGA (1.35x1.35) Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA Drain to Source Voltage (Vdss): 60V, 100V Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap) Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Package / Case: 9-VFBGA |
товару немає в наявності |
В кошику од. на суму грн. |
| EPC2108 |
|
Виробник: EPC
Description: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
Description: MOSFET 3N-CH 60V/100V 9BGA
Part Status: Obsolete
Supplier Device Package: 9-BGA (1.35x1.35)
Vgs(th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 0.22nC @ 5V, 0.044nC @ 5V
Rds On (Max) @ Id, Vgs: 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 30V, 7pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 1.7A, 500mA
Drain to Source Voltage (Vdss): 60V, 100V
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 9-VFBGA
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