EPC2252
Виробник: EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.10 грн |
| 10+ | 113.42 грн |
| 100+ | 77.69 грн |
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Технічний опис EPC2252 EPC
Description: TRANSGAN 80V.011OHM AECQ101 9BGA, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2.5mA, Supplier Device Package: Die, Grade: Automotive, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V, Qualification: AEC-Q101.
