EPC2307
Виробник: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
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Технічний опис EPC2307 EPC
Description: TRANS GAN 200V .010OHM 7QFN, Packaging: Tape & Reel (TR), Package / Case: 7-PowerWQFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 4mA, Supplier Device Package: 7-QFN (3x5), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V.
Інші пропозиції EPC2307 за ціною від 141.18 грн до 371.23 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EPC2307 | EPC |
Description: TRANS GAN 200V .010OHM 7QFN Packaging: Cut Tape (CT) Package / Case: 7-PowerWQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V Vgs(th) (Max) @ Id: 2.5V @ 4mA Supplier Device Package: 7-QFN (3x5) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V |
на замовлення 3136 шт: термін постачання 21-31 дні (днів) |
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EPC2307 | EPC |
GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN |
на замовлення 3887 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| EPC2307 |
|
Виробник: EPC
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
на замовлення 3136 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 371.23 грн |
| 10+ | 237.15 грн |
| 100+ | 169.18 грн |
| 500+ | 141.18 грн |