Технічний опис ER2DSMA Diotec Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 200V, Load current: 2A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: superfast switching, Case: SMA, Max. forward voltage: 1V, Max. forward impulse current: 50A, Leakage current: 0.3mA, Kind of package: reel; tape, Capacitance: 15pF, Max. load current: 10A, кількість в упаковці: 7500 шт.
Інші пропозиції ER2DSMA
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ER2DSMA | Виробник : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1V Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Capacitance: 15pF Max. load current: 10A кількість в упаковці: 7500 шт |
товару немає в наявності |
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ER2DSMA | Виробник : Diotec Semiconductor |
![]() Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
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![]() |
ER2DSMA | Виробник : Diotec Semiconductor |
![]() |
товару немає в наявності |
|
![]() |
ER2DSMA | Виробник : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1V Max. forward impulse current: 50A Leakage current: 0.3mA Kind of package: reel; tape Capacitance: 15pF Max. load current: 10A |
товару немає в наявності |