ERT2GAFC_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: DIODE GEN PURP 400V 2A SMAF-C
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SMAF-C
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.26 грн |
| 13+ | 22.75 грн |
| 100+ | 13.62 грн |
| 500+ | 11.84 грн |
| 1000+ | 8.05 грн |
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Технічний опис ERT2GAFC_R1_00001 Panjit International Inc.
Description: DIODE GEN PURP 400V 2A SMAF-C, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SMAF-C, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.
Інші пропозиції ERT2GAFC_R1_00001
| Фото | Назва | Виробник | Інформація |
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ERT2GAFC_R1_00001 | Виробник : Panjit International Inc. |
Description: DIODE GEN PURP 400V 2A SMAF-C Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
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