ES07D-M-08 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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Технічний опис ES07D-M-08 Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Qualification: AEC-Q101.
Інші пропозиції ES07D-M-08 за ціною від 6.01 грн до 35.35 грн
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ES07D-M-08 | Vishay Semiconductors |
Rectifiers SWITCHING DIODE GENPURP SMF DO219e3M |
на замовлення 35252 шт: термін постачання 21-30 дні (днів) |
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ES07D-M-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 200V 500MA DO219AB Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 23009 шт: термін постачання 21-31 дні (днів) |
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| ES07D-M-08 |
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Виробник: Vishay Semiconductors
Rectifiers SWITCHING DIODE GENPURP SMF DO219e3M
Rectifiers SWITCHING DIODE GENPURP SMF DO219e3M
на замовлення 35252 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 26.64 грн |
| 16+ | 20.96 грн |
| 100+ | 12.22 грн |
| 500+ | 9.22 грн |
| 1000+ | 8.17 грн |
| 2500+ | 6.98 грн |
| 5000+ | 6.01 грн |
| ES07D-M-08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GP 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 23009 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 35.35 грн |
| 12+ | 26.10 грн |
| 100+ | 15.68 грн |
| 500+ | 13.62 грн |
| 1000+ | 9.26 грн |