Технічний опис ES1A-TP Micro Commercial Components
Description: DIODE GEN PURP 50V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 45pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (HSMA), Operating Temperature - Junction: -50°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.
Інші пропозиції ES1A-TP
| Фото | Назва | Виробник | Інформація |
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ES1A-TP | Виробник : Micro Commercial Co |
 Description: DIODE GEN PURP 50V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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ES1A-TP | Виробник : Micro Commercial Co |
Description: DIODE GEN PURP 50V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
товару немає в наявності |
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ES1A-TP | Виробник : Micro Commercial Components (MCC) |
Rectifiers super fast 1.0A 50V |
товару немає в наявності |