ES1AHE3_A/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1800+ | 7.44 грн |
3600+ | 6.6 грн |
5400+ | 6.32 грн |
Відгуки про товар
Написати відгук
Технічний опис ES1AHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 10pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Qualification: AEC-Q101.
Інші пропозиції ES1AHE3_A/H за ціною від 5.41 грн до 27.49 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ES1AHE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12403 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
ES1AHE3_A/H | Виробник : Vishay General Semiconductor | Rectifiers 1.0 Amp 50 Volt 30 Amp IFSM |
на замовлення 6422 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||
ES1AHE3_A/H | Виробник : Vishay | Rectifier Diode Switching 50V 1A 15ns Automotive 2-Pin SMA T/R |
товар відсутній |
||||||||||||||||||
ES1AHE3_A/H | Виробник : Vishay | Diode Switching 50V 1A Automotive AEC-Q101 2-Pin SMA T/R |
товар відсутній |
||||||||||||||||||
ES1AHE3_A/H | Виробник : Vishay | Diode Switching 50V 1A Automotive AEC-Q101 2-Pin SMA T/R |
товар відсутній |