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ES1F R3G Taiwan Semiconductor

ES1A%20SERIES_O2112.pdf
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 300V 1A 35ns 2-Pin SMA T/R
на замовлення 3490 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
38+20.22 грн
62+12.16 грн
63+12.03 грн
100+7.94 грн
250+7.27 грн
500+3.91 грн
1000+3.90 грн
Мінімальне замовлення: 38 шт
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Технічний опис ES1F R3G Taiwan Semiconductor

Description: DIODE GEN PURP 300V 1A DO214AC, Current - Reverse Leakage @ Vr: 5 µA @ 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 300 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 35 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).

Інші пропозиції ES1F R3G

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ES1F R3G ES1F R3G Taiwan Semiconductor Corporation ES1A%20SERIES_O2112.pdf Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
товару немає в наявності
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ES1F R3G ES1F R3G Taiwan Semiconductor ES1A%20SERIES_O2112.pdf Rectifiers 35ns, 1A, 300V, Super Fast Recovery Rectifier
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ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 300 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
ES1F R3G ES1A%20SERIES_O2112.pdf
ES1F R3G
Виробник: Taiwan Semiconductor
Rectifiers 35ns, 1A, 300V, Super Fast Recovery Rectifier
товару немає в наявності
В кошику  од. на суму  грн.