ES2AHE3_A/H Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 6+ | 60.72 грн |
| 10+ | 36.54 грн |
| 100+ | 20.97 грн |
| 500+ | 15.61 грн |
| 750+ | 14.07 грн |
| 2250+ | 9.68 грн |
| 24750+ | 9.61 грн |
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Технічний опис ES2AHE3_A/H Vishay General Semiconductor
Description: DIODE GEN PURP 50V 2A DO214AA, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 20 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Інші пропозиції ES2AHE3_A/H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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ES2AHE3_A/H | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 50V 2A DO214AAQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 50 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AA (SMB) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 18pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 20 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Packaging: Tape & Reel (TR) |
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