ES2AHE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA
Grade: Automotive
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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Технічний опис ES2AHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 2A DO214AA, Grade: Automotive, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 10 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 20 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).
Інші пропозиції ES2AHE3_A/I
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
ES2AHE3_A/I | Vishay General Semiconductor |
Rectifiers 2A,50V,20ns SMB, UF Rect, SMD |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. |
 |
ES2AHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV Max. off-state voltage: 50V Load current: 2A Case: DO214AA; SMB Mounting: SMD Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 20ns Max. forward impulse current: 50A Max. forward voltage: 0.9V Features of semiconductor devices: glass passivated; ultrafast switching |
товару немає в наявності |
Мінімальне замовлення: 6400 шт В кошику од. на суму грн. |
| ES2AHE3_A/I |
|
Виробник: Vishay General Semiconductor
Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.
| ES2AHE3_A/I |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Max. off-state voltage: 50V
Load current: 2A
Case: DO214AA; SMB
Mounting: SMD
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 20ns
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; DO214AA,SMB; Ufmax: 900mV
Max. off-state voltage: 50V
Load current: 2A
Case: DO214AA; SMB
Mounting: SMD
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 20ns
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Features of semiconductor devices: glass passivated; ultrafast switching
товару немає в наявності
Мінімальне замовлення: 6400 шт
В кошику
од. на суму грн.