Технічний опис ES2B-M3/52T Vishay
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V, Case: DO214AA; SMB, Capacitance: 18pF, Max. off-state voltage: 100V, Max. forward voltage: 0.9V, Load current: 2A, Semiconductor structure: single diode, Reverse recovery time: 50ns, Max. forward impulse current: 50A, Leakage current: 0.35mA, Kind of package: 7 inch reel, Type of diode: rectifying, Quantity in set/package: 750pcs., Features of semiconductor devices: glass passivated; ultrafast switching, Mounting: SMD, кількість в упаковці: 1 шт.
Інші пропозиції ES2B-M3/52T
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ES2B-M3/52T | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 7 inch reel Type of diode: rectifying Quantity in set/package: 750pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD кількість в упаковці: 1 шт |
товару немає в наявності |
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ES2B-M3/52T | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
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ES2B-M3/52T | Виробник : Vishay General Semiconductor |
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товару немає в наявності |
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ES2B-M3/52T | Виробник : VISHAY |
![]() Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: 7 inch reel Type of diode: rectifying Quantity in set/package: 750pcs. Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
товару немає в наявності |