ES2B-M3/5BT VISHAY
Виробник: VISHAYCategory: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V
Case: DO214AA; SMB
Capacitance: 18pF
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 50A
Leakage current: 0.35mA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Mounting: SMD
кількість в упаковці: 1 шт
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Технічний опис ES2B-M3/5BT VISHAY
Description: DIODE GEN PURP 100V 2A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 18pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Інші пропозиції ES2B-M3/5BT
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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ES2B-M3/5BT | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
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ES2B-M3/5BT | Виробник : Vishay General Semiconductor |
Rectifiers 2A,100V,20NS,UF Rect,SMD |
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| ES2B-M3/5BT | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 2A; 50ns; DO214AA,SMB; Ufmax: 0.9V Case: DO214AA; SMB Capacitance: 18pF Max. off-state voltage: 100V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 50A Leakage current: 0.35mA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Mounting: SMD |
товар відсутній |