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Технічний опис ES2JTR SMC Diode Solutions
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ir: 5uA, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 2A, Reverse recovery time: 35ns, Semiconductor structure: single diode, Features of semiconductor devices: ultrafast switching, Case: SMA, Max. forward voltage: 1.7V, Kind of package: reel; tape, Leakage current: 5µA.
Інші пропозиції ES2JTR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
ES2JTR | SMC Diode Solutions |
Description: DIODE GEN PURP 600V 2A SMA |
товару немає в наявності |
В кошику од. на суму грн. |
|
ES2JTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. |
| ES2JTR |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE GEN PURP 600V 2A SMA
Description: DIODE GEN PURP 600V 2A SMA
товару немає в наявності
В кошику
од. на суму грн.
| ES2JTR |
![]() |
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMA; Ufmax: 1.7V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Leakage current: 5µA
товару немає в наявності
В кошику
од. на суму грн.




