ES6U1T2R Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
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Технічний опис ES6U1T2R Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT, Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 6-WEMT, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 700mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V.
Інші пропозиції ES6U1T2R за ціною від 10.97 грн до 49.70 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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ES6U1T2R | Rohm Semiconductor |
Description: MOSFET P-CH 12V 1.3A 6WEMT Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 6-WEMT Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 8330 шт: термін постачання 21-31 дні (днів) |
|
| ES6U1T2R |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 1.3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 1.3A 6WEMT
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 260mOhm @ 1.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 8330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.70 грн |
| 11+ | 29.69 грн |
| 100+ | 19.01 грн |
| 500+ | 13.53 грн |
| 1000+ | 12.14 грн |
| 2000+ | 10.97 грн |