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ESH1DMH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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Технічний опис ESH1DMH Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Micro SMA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 3pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Інші пропозиції ESH1DMH за ціною від 7.65 грн до 31.77 грн
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ESH1DMH | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 1A MICRO SMA Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: Micro SMA Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 3pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Packaging: Cut Tape (CT) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
| ESH1DMH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A MICRO SMA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Micro SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.77 грн |
| 12+ | 25.15 грн |
| 100+ | 17.12 грн |
| 500+ | 12.05 грн |
| 1000+ | 9.04 грн |
| 2000+ | 8.28 грн |
| 5000+ | 7.65 грн |