Технічний опис ESH2PBHM3/85A Vishay
Description: DIODE GEN PURP 100V 2A DO220AA, Packaging: Tape & Reel (TR), Package / Case: DO-220AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: DO-220AA (SMP), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V.
Інші пропозиції ESH2PBHM3/85A
Фото | Назва | Виробник | Інформація |
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ESH2PBHM3/85A | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
товару немає в наявності |
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ESH2PBHM3/85A | Виробник : Vishay Semiconductors |
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товару немає в наявності |