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Технічний опис ESH2PD-M3/85A Vishay Semiconductors
Description: DIODE GEN PURP 200V 2A DO220AA, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DO-220AA (SMP), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 25 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR).
Інші пропозиції ESH2PD-M3/85A
| Фото | Назва | Виробник | Інформація |
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~~2.jpg "ESH2PD-M3/85A") |
ESH2PD-M3/85A | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 200V 2A DO220AACurrent - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 25pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
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