F1T6G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
| Кількість | Ціна |
|---|---|
| 5000+ | 4.37 грн |
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Технічний опис F1T6G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A TS-1, Packaging: Tape & Reel (TR), Package / Case: T-18, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: TS-1, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Інші пропозиції F1T6G за ціною від 4.13 грн до 25.32 грн
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F1T6G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 1A TS-1 Packaging: Cut Tape (CT) Package / Case: T-18, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| F1T6G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 1A TS-1
Packaging: Cut Tape (CT)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.32 грн |
| 18+ | 17.07 грн |
| 100+ | 8.64 грн |
| 500+ | 6.61 грн |
| 1000+ | 4.91 грн |
| 2000+ | 4.13 грн |