F411MR12W2M1B76BOMA1 Infineon Technologies

Description: MOSFET 4N-CH 1200V AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V, Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V, Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V, Vgs(th) (Max) @ Id: 5.55V @ 40mA, Supplier Device Package: AG-EASY1B-2, Part Status: Obsolete.