F475R12KS4B11BOSA1

F475R12KS4B11BOSA1 Infineon Technologies


Infineon-F4_75R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa99f261370 Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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Технічний опис F475R12KS4B11BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 100A 500W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V.