F475R12KS4BOSA1

Виробник: Infineon Technologies
Description: IGBT MOD 1200V 100A 500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V

Виробник: Infineon Technologies
IGBT Modules LOW POWER ECONO

Виробник: INFINEON
Description: INFINEON - F475R12KS4BOSA1 - IGBT-Modul, Viererpack, 100 A, 3.2 V, 500 W, 125 °C, Module
IGBT-Technologie: IGBT 2 Fast
Sperrschichttemperatur Tj, max.: 125
Kollektor-Emitter-Sättigungsspannung: 3.2
Dauer-Kollektorstrom: 100
IGBT-Anschluss: Einpressmontage
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2
Verlustleistung Pd: 500
Verlustleistung: 500
Bauform - Transistor: Module
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Produktpalette: EconoPACK 2
Kollektor-Emitter-Spannung, max.: 1.2
IGBT-Konfiguration: Viererpack
Wandlerpolarität: n-Kanal
DC-Kollektorstrom: 100
Betriebstemperatur, max.: 125
SVHC: No SVHC (08-Jul-2021)

Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 100A 500W 24-Pin ECONO2-6 Tray