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Технічний опис FCA36N60NF onsemi / Fairchild
Description: MOSFET N-CH 600V 34.9A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Інші пропозиції FCA36N60NF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FCA36N60NF | Виробник : onsemi |
 Description: MOSFET N-CH 600V 34.9A TO3PNInput Capacitance (Ciss) (Max) @ Vds: 4245 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 34.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
товару немає в наявності |
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FCA36N60NF | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 104.7A; 312W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 104.7A Power dissipation: 312W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |