FCD9N60NTM onsemi / Fairchild

Description: MOSFET N-CH 600V 9A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 92.6W (Tc), Rds On (Max) @ Id, Vgs: 385mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).