| Кількість | Ціна |
|---|---|
| 1+ | 1337.36 грн |
| 10+ | 1211.50 грн |
| 25+ | 1002.14 грн |
| 50+ | 948.69 грн |
| 100+ | 893.13 грн |
| 250+ | 862.19 грн |
| 450+ | 728.57 грн |
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Технічний опис FCH043N60 onsemi / Fairchild
Description: MOSFET N-CH 600V 75A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V, Power Dissipation (Max): 592W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V.
Інші пропозиції FCH043N60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
FCH043N60 | Виробник : onsemi |
Description: MOSFET N-CH 600V 75A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 38A, 10V Power Dissipation (Max): 592W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12225 pF @ 400 V |
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