на замовлення 158 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 454.13 грн |
| 10+ | 383.48 грн |
| 25+ | 302.24 грн |
| 100+ | 278.32 грн |
| 250+ | 246.44 грн |
| 450+ | 233.82 грн |
| 900+ | 217.88 грн |
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Технічний опис FCH35N60 onsemi / Fairchild
Description: MOSFET N-CH 600V 35A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V, Power Dissipation (Max): 312.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V.
Інші пропозиції FCH35N60
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FCH35N60 | Виробник : ON Semiconductor |
 Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| FCH35N60 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.2A Pulsed drain current: 105A Power dissipation: 312.5W Case: TO247 Gate-source voltage: ±30V On-state resistance: 79mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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FCH35N60 | Виробник : onsemi |
Description: MOSFET N-CH 600V 35A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 17.5A, 10V Power Dissipation (Max): 312.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6640 pF @ 25 V |
товар відсутній |
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| FCH35N60 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.2A; Idm: 105A; 312.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.2A Pulsed drain current: 105A Power dissipation: 312.5W Case: TO247 Gate-source voltage: ±30V On-state resistance: 79mΩ Mounting: THT Gate charge: 139nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |