Технічний опис FCH47N60NF ON Semiconductor
Description: MOSFET N-CH 600V 45.8A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V, Power Dissipation (Max): 368W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100.
Інші пропозиції FCH47N60NF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
FCH47N60NF | onsemi |
Description: MOSFET N-CH 600V 45.8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
товару немає в наявності |
В кошику од. на суму грн. |
|
FCH47N60NF | onsemi / Fairchild |
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| FCH47N60NF |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
товару немає в наявності
В кошику
од. на суму грн.
| FCH47N60NF |
![]() |
Виробник: onsemi / Fairchild
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
MOSFET 600V N-Chan MOSFET FRFET, SupreMOS
товару немає в наявності
В кошику
од. на суму грн.




