| Кількість | Ціна |
|---|---|
| 1+ | 497.75 грн |
| 10+ | 441.66 грн |
| 25+ | 363.10 грн |
| 100+ | 314.92 грн |
Відгуки про товар
Написати відгук
Технічний опис FCI25N60N-F102 onsemi / Fairchild
Description: MOSFET N-CH 600V 25A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262 (I2PAK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 216W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції FCI25N60N-F102
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FCI25N60N-F102 | Виробник : onsemi |
 Description: MOSFET N-CH 600V 25A I2PAKInput Capacitance (Ciss) (Max) @ Vds: 3352 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-262 (I2PAK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 216W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |