FCMT360N65S3 onsemi
Виробник: onsemiDescription: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.20 грн |
| 10+ | 176.42 грн |
| 100+ | 147.90 грн |
| 500+ | 135.67 грн |
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Технічний опис FCMT360N65S3 onsemi
Description: MOSFET N-CH 650V 10A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Інші пропозиції FCMT360N65S3 за ціною від 118.09 грн до 203.54 грн
| Фото | Назва | Виробник | Інформація |
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FCMT360N65S3 | Виробник : onsemi |
MOSFETs Easy Drive 650V 10A 360 mOhm |
на замовлення 2518 шт: термін постачання 21-30 дні (днів) |
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| FCMT360N65S3 | Виробник : ONSEMI |
Description: ONSEMI - FCMT360N65S3 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 5410 шт: термін постачання 21-31 дні (днів) |
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FCMT360N65S3 | Виробник : ON Semiconductor |
Trans MOSFET N-CH 650V 10A 4-Pin PQFN EP T/R |
товару немає в наявності |
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FCMT360N65S3 | Виробник : onsemi |
Description: MOSFET N-CH 650V 10A 4PQFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
товару немає в наявності |
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| FCMT360N65S3 | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Kind of channel: enhancement Type of transistor: N-MOSFET Case: PQFN4 Mounting: SMD Polarisation: unipolar Gate charge: 18nC On-state resistance: 0.36Ω Power dissipation: 83W Drain current: 10A Gate-source voltage: ±30V Pulsed drain current: 25A Kind of package: reel; tape Drain-source voltage: 650V |
товару немає в наявності |