FCPF1300N80ZYD Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 800V 4A TO220F-3
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3 (Y-Forming)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Formed Leads
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 281+ | 77.43 грн |
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Технічний опис FCPF1300N80ZYD Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Power Dissipation (Max): 24W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V.
Інші пропозиції FCPF1300N80ZYD за ціною від 77.43 грн до 77.43 грн
| Фото | Назва | Виробник | Інформація |
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FCPF1300N80ZYD | Виробник : onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, N Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 24W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
на замовлення 497 шт: термін постачання 21-31 дні (днів) |
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FCPF1300N80ZYD | Виробник : ON Semiconductor / Fairchild |
MOSFET SF2 800V 1.3OHM E TO220F |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |