FCPF2250N80Z Fairchild Semiconductor

Description: MOSFET N-CH 800V 2.6A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4.5V @ 260µA, Power Dissipation (Max): 21.9W (Tc), Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.