FCPF380N65FL1 onsemi / Fairchild
Виробник: onsemi / Fairchild
MOSFET Power MOSFET, N-Channel, SUPERFET II, FRFET , 650 V, 10.2 A, 380 mO, TO-220F
| Кількість | Ціна |
|---|---|
| 2+ | 179.26 грн |
| 10+ | 159.68 грн |
| 25+ | 131.10 грн |
| 100+ | 111.36 грн |
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Технічний опис FCPF380N65FL1 onsemi / Fairchild
Description: MOSFET N-CH 650V 10.2A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 100 V.
Інші пропозиції FCPF380N65FL1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FCPF380N65FL1 | onsemi |
Description: MOSFET N-CH 650V 10.2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 100 V |
товару немає в наявності |
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| FCPF380N65FL1 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 100 V
Description: MOSFET N-CH 650V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.1A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.