FCPF4300N80Z Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Power Dissipation (Max): 19.2W (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 263+ | 85.11 грн |
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Технічний опис FCPF4300N80Z Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.6A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4.5V @ 160µA, Power Dissipation (Max): 19.2W (Tc), Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції FCPF4300N80Z за ціною від 63.56 грн до 230.53 грн
| Фото | Назва | Виробник | Інформація |
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FCPF4300N80Z | Виробник : onsemi / Fairchild |
MOSFETs N-Channel SuperFET II MOSFET 800 V, 1.6 A, 4.3 O |
на замовлення 874 шт: термін постачання 21-30 дні (днів) |
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FCPF4300N80Z | Виробник : onsemi |
Description: MOSFET N-CH 800V 1.6A TO220F Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4.5V @ 160µA Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 983 шт: термін постачання 21-31 дні (днів) |
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