Технічний опис FD1000R33HE3KBPSA1 Infineon Technologies
Description: IGBT MOD 3300V 1000A 11500W MOD, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Brake Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 1000 A, Voltage - Collector Emitter Breakdown (Max): 3300 V, Power - Max: 11500 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 190 nF @ 25 V.
Інші пропозиції FD1000R33HE3KBPSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FD1000R33HE3KBPSA1 | Виробник : Infineon Technologies |
 Trench and Field Stop IGBT Module |
товару немає в наявності |
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FD1000R33HE3KBPSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 3300V 1000A 11500W MOD Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Dual Brake Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 11500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 190 nF @ 25 V |
товару немає в наявності |
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| FD1000R33HE3KBPSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck-boost chopper; Urmax: 3.3kV Mechanical mounting: screw Case: AG-IHVB190 Type of semiconductor module: IGBT Application: Inverter Electrical mounting: screw Gate-emitter voltage: ±20V Collector current: 1kA Pulsed collector current: 2kA Max. off-state voltage: 3.3kV Power dissipation: 11.5kW Topology: buck-boost chopper Semiconductor structure: diode/transistor |
товару немає в наявності |