Технічний опис FD6M016N03 Fairchil
Description: MOSFET 2N-CH 30V 80A EPM15, Packaging: Tube, Package / Case: EPM15, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 80A, Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V, Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: EPM15.
Інші пропозиції FD6M016N03
| Фото | Назва | Виробник | Інформація |
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FD6M016N03 | Виробник : onsemi |
 Description: MOSFET 2N-CH 30V 80A EPM15Packaging: Tube Package / Case: EPM15 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A Input Capacitance (Ciss) (Max) @ Vds: 11535pF @ 15V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 295nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: EPM15 |
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