FD6M043N08 ONSEMI
Виробник: ONSEMI
Description: ONSEMI - FD6M043N08 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Технічний опис FD6M043N08 ONSEMI
Description: MOSFET 2N-CH 75V 65A EPM15, Supplier Device Package: EPM15, Vgs(th) (Max) @ Id: 4V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Through Hole, Package / Case: EPM15, Packaging: Tube, Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 65A, Drain to Source Voltage (Vdss): 75V.
Інші пропозиції FD6M043N08
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FD6M043N08 | onsemi |
Description: MOSFET 2N-CH 75V 65A EPM15 Supplier Device Package: EPM15 Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Through Hole Package / Case: EPM15 Packaging: Tube Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 65A Drain to Source Voltage (Vdss): 75V |
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В кошику од. на суму грн. |
| FD6M043N08 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 75V 65A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 75V
Description: MOSFET 2N-CH 75V 65A EPM15
Supplier Device Package: EPM15
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 40A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 25V
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: EPM15
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 75V
товару немає в наявності
В кошику
од. на суму грн.